| PART |
Description |
Maker |
| APT30M17JLL |
POWER MOS 7 300V 135A 0.017 Ohm
|
Advanced Power Technology
|
| NP48N055KHE NP48N055KHE-E1-AY NP48N055KHE-E2-AY NP |
48 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
| APT30M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 300V 130A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT30M30B2LL APT30M30LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 100A 0.030 Ohm
|
Advanced Power Technology Ltd.
|
| ST083S04PFM0 ST083S08PFM0 ST083S04PFN0 ST083S08PFN |
INVERTER GRADE THYRISTORS 晶闸管逆变器级
1200V 135A Inverter Thyristor in a TO-209AC (TO-94) package
1000V 135A Inverter Thyristor in a TO-209AC (TO-94) package
800V 135A Inverter Thyristor in a TO-209AC (TO-94) package
400V 135A Inverter Thyristor in a TO-209AC (TO-94) package
|
International Rectifier, Corp.
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| HUFA76437S3S HUFA76437P3 HUFA76437S3ST |
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| STS8DNH3LL |
DUAL N-CHANNEL 30V - 0.017 OHM - 8A SO-8 LOW GATE CHARGE STripFET™ III POWER MOSFET
|
ST Microelectronics
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| SPP02N80C3 SPA02N80C3 |
Cool MOS™ Power Transistor
Cool MOS Power Transistor
Cool MOS& Power Transistor
Cool MOS™ Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
INFINEON[Infineon Technologies AG]
|
